Theoretical Modeling of Single-Walled Boron Nitride Nanotube Growth in CVD

F. Ghasemi Morudi | Mohammadreza Saeidi

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URL :   http://research.shahed.ac.ir/WSR/WebPages/Report/PaperView.aspx?PaperID=137737
Date :  2020/03/02
Publish in :    Iranian Journal of Science and Technology, Transactions A: Science
DOI :  https://doi.org/10.1007/s40995-020-00841-3
Link :  http://dx.doi.org/10.1007/s40995-020-00841-3
Keywords :Growth mechanism · Boron nitride nanotube · Chemical vapor deposition · Phonon oscillation · Thermodynamics

Abstract :

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Growth mechanism of single-walled boron nitride nanotube (BNNT) in chemical vapor deposition method is presented based on investigation of role of phonon oscillations in the system. The theoretical analysis shows that thicker produced BNNT has shorter length. Also, depending on the type of catalyst, there is a furnace temperature which optimizes the growth of BNNT. Moreover, when the ambient gas pressure is increased, the nanotube growth rate is increased.