TRIPLE-TUNNEL JUNCTION SINGLE ELECTRON TRANSISTOR (TTJ-SET)

Ali Shahhoseini | Kamyar Saghafi | Mohammad Kazem Moravvej-Farshi | Rahim Faez

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URL :   http://research.shahed.ac.ir/WSR/WebPages/Report/PaperView.aspx?PaperID=4648
Date :  2011/07/10
Publish in :    Modern Physics Letters B
DOI :  https://doi.org/10.1142/s0217984911026346

Keywords :Single electron transistor (SET), triple-junction single electron transistor (TTJ-SET), digital inverter, analog rectifier

Abstract :

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We propose a triple-tunnel junction single electron transistor (TTJ-SET). The proposed structure consists of a metallic quantum-dot island that is capacitive coupled to a gate contact and surrounded by three tunnel junctions. To the best of our knowledge, this is the first instance of introducing this new structure that is suitable for both digital and analog applications. I–VD characteristics of the proposed TTJ-SET, simulated by a HSPICE macro model for various gate voltages, are in excellent agreement with those obtained by SIMON, which is a Monte-Carlo based simulator. We show how one can design a digital inverter by using a single TTJ-SET. We also show that, under suitable conditions, a TTJ-SET can operate as a full- or half-wave analog rectifier.