Circuit-Level Implementation of Semiconductor Self-Assembled Quantum Dot Laser

V. Ahmadi | Mohammad Hasan yavari

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URL :   http://research.shahed.ac.ir/WSR/WebPages/Report/PaperView.aspx?PaperID=159573
Date :  2009/05/01
Publish in :    IEEE Journal of Selected Topics in Quantum Electronics
DOI :  https://doi.org/10.1109/JSTQE.2008.2011997
Link :  http://dx.doi.org/10.1109/JSTQE.2008.2011997
Keywords :Circuit model, InGaAs–GaAs, modulation response, phonon bottleneck, self-assembled quantum dot laser (SAQDL)

Abstract :

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In this paper, for the first time, we present a circuit model of InGaAs–GaAs self-assembled quantum dot (QD) lasers (SAQDLs) based on the standard rate equations. By using the presented model, effects of carrier dynamics onQDlaser static and dynamic performances are investigated. Simulated results show that retarded carrier relaxation due to phonon bottleneck degrades the threshold current, external quantum efficiency, andmodulation response of QD laser, which is in agreement with the results reported by other researchers. The model accurately explains the operating characteristics found in InGaAs–GaAs SAQDLs.