Graphene nanoribbon tunnel field effect transistor with lightly doped drain: Numerical simulations

Seyed Saleh Ghoreishi | Kamyar Saghafi | Reza Yousefi | Mohammad Kazem Moravvej-Farshi

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URL :   http://research.shahed.ac.ir/WSR/WebPages/Report/PaperView.aspx?PaperID=42726
Date :  2014/08/07
Publish in :    Superlattices and Microstructures
DOI :  https://doi.org/10.1016/j.spmi.2014.07.042

Keywords :nanoribbon, field

Abstract :

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By inserting a lightly doped region between the highly doped drain and the intrinsic channel of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new lightly doped drain (LDD)-GNR-TFET. Transport characteristics of the proposed transistor is numerically simulated, employing the third-nearest-neighbor tight-binding approximation in mode space non-equilibrium Green’s function formulism (NEGF), in ballistic regime. Simulations show, in comparison with a conventional GNR-TFET of the same dimensions, the proposed LDD-GNR-TFET exhibits a 102–103 times smaller OFF-current, an up to 105 times larger ON/OFF ratio, a shorter time delay, a smaller power-delay product (PDP) and a less drain induced barrier thinning (DIBT), besides preserving the subthreshold swing.